1. In this study, the method using SOMto produce Tantalum and was discussed under the condition of laboratory.
本文在实验室条件下开展了利用固体透氧膜法制备金属Ta的研究，主要研究了固体透氧膜在熔盐电解中的稳定性。
2. First, dissolving inorganic salts, strontium nitrate, bismuth nitrate and fluorine tantalum acid were chosen to substitute for the traditional metal organic salts as precursor to prepare SrBi〓Ta〓O〓 thin films.
本文首先选用可溶性无机盐原料替代传统的金属有机物盐类作SrBi〓Ta〓0〓薄膜的前驱体。
3. The surface morphologies of tantalum oxide films using different preparing methods were analyzed by AFM.
采用原子力显微镜对Ta2O5 膜进行了表面形貌分析，并对其MIM 二极管的伏安特性进行了测试与比较。
4. Tantalum(Ta)
4. A new simple, rapid and accurate method was developed for the determination of impurity in high purity tantalum and its oxide.
研究结果表明：用该法测定高纯Ta2 O5 中 1 2种杂质元素回收率在 90 %～ 1 1 0 %之间，相对标准偏差小于 8 1 5 %。
5. This paper expounded the crystallization and its mechanism of the tantalum anode oxide film for tantalum electrolysis capacitor formed by sintering.
钽电解电容器的钽阳极氧化膜(Ta2O5)是一种无定型结构膜，它是一种电性能很优良的介子膜。
6. Tantalum(Ta)
6. In the case of one heat exchanger consist of tantalum tube and Ta/16MnR clad sheet, the key factors for quality of welding joint between heat-exchanging tube and tube-plate was discussed.
分析了利用钽做换热管、Ta/16MnR复合板做管板的管板式换热器，影响管板焊接接头焊接质量的关键因素。
7. By using ANSYS, the temperature field of tube to tube sheet argon-arc welding joint which consist of tantalum tube and Ta/l6MnB clad sheet was simulated. It deals with four kinds of welding joint. The numerical simulation results show that the thickness of tantalum layer of Ta/16MnH clad sheet was primary factor for welding quality. The tantalum layer of Ta/l6MnR clad sheet need 2.5mm, otherwise the 16MnR steel beneath tantalum layer would melt and inter-metallic compounds (Fe2Ta) would produced. The numerical simulation result has been substantiated by the experimental results in reference.
对四种尺寸组合焊接接头的温度场进行了数值模拟数值结果表明，合理选择钽－钢复合板的钽层厚度可以避免Fe2Ta的形成，为了使钽－钢复合板钢层在焊接过程中不出现熔化，保证焊接接头质量，钽层厚度要达到2.5mm，这一模拟结果得到了试验验证。
8. Tantalum(Ta)的解释
8. The approaches, by which conducting polypyrrole could be electrodeposited on the surface of tantalun/tantalum pentoxide-based anode(1 microfarad, 16V), have been studied. The galvanostatically polymerized polypyrrole is used for the cathodes of tantalum electrolytic capacitors. Particularly, the influence of electropolymerization conditions, such assupporting electrolyte solution composition, anodic current value and applied mode, on the capacitance and dissipation factor of as-made capacitor has been discussed.
摘 要：研究了导电聚吡咯在多孔Ta／Ta2O5阳极体1μF/16V）表面的制备方法，采用恒电流电聚合法在该阳极体表面沉积一层导电聚吡咯作为电解电容器的阴极，着重探讨了支撑电解液的组成、阳极电流的大小及其施加方式对所形成的电容器容量和损耗因子的影响。
9. The effects of titanium or tantalum adhesion layer on the ferroelectric and microstructural properties of metal-organic decomposition-derived SrBi2Ta2O9 films are investigated. It is found that the atoms of adhesion layer play a significant role on the resultant microstructures and physical properties of SBT films.
本论文第一部份之内容，在於探讨钛以及钽黏著层，对以有机金属法镀制之钽酸锶铋(SrBi2Ta2O9，SBT)薄膜的铁电特性及微结构的影响；结果发现，黏著层对於钽酸锶铋薄膜的最终微结构与物理特性，扮演著重要的角色。
10. XRD results show that the anatase phase of titanium dioxide films can be fabricated at 400 ℃, and at this temperature, the deposited tantalum oxide and silicon dioxide were amorphous.
对制备的薄膜进行XRD测试表明，在基片温度为400℃时能制备出TiO2薄膜晶体，结构为锐钛矿型，而在此温度下，SiO2和Ta2O5却只能得到非晶态的结构。
11. A precursor sol from soluble inorganic salts strontium nitrate, bismuth nitrate and fluorine tantalum acid was employed in preparing SrBi_2Ta_2O_9 (SBT) ferroelectric ceramic thin films by sol-gel spin-coating method on Si (111)/SiO_2/Ti/Pt substrate.
采用可溶性无机盐为原料，利用溶胶凝胶旋转涂覆工艺，在Si（111）/SiO2/Ti/Pt的衬底材料上制备了SrBi2Ta2O9铁电薄膜。
12. Electrochemical behavior of boron-doped diamond thin-film electrodes grown on tantalum Study on Secondary Electron Emission Performance of B-doped Diamond Films
Ta衬底B掺杂金刚石薄膜电极极化特性掺硼金刚石薄膜二次电子发射特性的研究
13. The chemical yield of element hafnium is more than 60% and the decontamination factor of tantalum is higher than 102 in the chemical separation.
本流程中，元素Hf的化学产额大于60%，对元素Ta的去污因子大于102。
14. The Preparation and Performance Characterization of (Sb, Ta, Li) Modified Alkali Metal-Containing Niobate-Based Piezoceramics Effects of Substituents on the Reaction Barriers of the Intramolecular α - Hydrogen Transfer in Organometallic Tantalum Complexes
碱金属铌钽锑酸盐无铅压电陶瓷的制备和性能表征取代基对有机金属钽化合物中分子内α-H转移势垒的影响
15. 公共查询·英语单词大全
15. The amounts of tantalum and silicon in Ti-Al-Based intermetallic compound were determined by ICP-AES. The spectral interference from matrix elements and coexist elements and the method of eliminating the interference was studied.
采用ICP-AES法测定钛铝系金属间化合物中Ta、Si的含量，研究了基体元素和共存元素的干扰以及消除方法。
16. Tantalum oxide and tantalum nitride films with different composition, microstructure, physical and mechanical properties fabricated by unbalanced magnetron sputtering were investigated in this paper.
本论文采用非平衡磁控溅射技术制备出不同成分、结构、物理性能和力学性能的Ta-O和Ta-N薄膜。
17. The Fabrication and Properties of Tantalum Oxide and Tantalum Nitride Films
Ta-O及Ta-N薄膜的制备及其性能研究
18. Tantalum oxide has proven to be an effective photocatalyst owing to its broad band gap and good chemical resistance.
作为一种新型的光催化材料，五氧化二钽（Ta2O5）以其禁带宽度大、化学稳定性好等特点引起了人们广泛的关注。
19. The effects of tantalum concentration, temperature and reaction time on the particle size and morphology, and the effects of temperature and calcined time on the crystalline of tantalum oxide have been investigated.
研究了水解过程中乙醇钽浓度、温度、加料时间对产品粒度的影响以及煅烧温度与时间对Ta2O5晶形的影响。
20. Tantalum oxide (Ta_2O_5) thin film photocatalysts were prepared on single crystal Si (110) substrates via sol-gel and spin coating methods.
利用溶胶-凝胶法和旋转镀膜法在单晶Si（110）基底上制备了Ta2O5光催化剂薄膜。